Product/Service

80 & 200µm InGaAs Avalanche Photodiode Preamplifier Modules

Source: CMC Electronics
CMC's 264-339757-VAR InGaAs Avalanche Photodiode Preamplifier Modules are using a low noise InGaAs APD with an ionization ratio of 0.2 with a Gasfet input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback resistor is listed in the available datasheet, Each amplifier has an overload input protection circuit for fast recovery. The output can be AC or DC coupled to a 100 ohm load.

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•80 & 200µm InGaAs Avalanche Photodiode Preamplifier Modules Datasheet

These InGaAs avalanche photodiode preamplifier modules are ideal for free-space optical communication systems, and applications involving LIDAR, laser profiling, and range finding.

Features:

  • Low k of 0.2 (Low excess noise) APD
  • High Quantum Efficiency 1000-1600nm
  • Low noise (NEP) TIA
  • Fast overload recovery
  • Hermetically-Sealed TO-8 Package
  • ITAR Free

Additional information can be found on the available datasheet. You can contact us for additional information on our 80 & 200µm InGaAs Avalanche Photodiode Preamplifier Modules

Click Here To Download:
•80 & 200µm InGaAs Avalanche Photodiode Preamplifier Modules Datasheet