Avalanche Photodiode (APD) C30659 Series

The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ regular C30950 Series.

The C30659 is pin-to-pin compatible with the C30950 Series with a negative output. An emitter follower is used as an output buffer stage. To obtain the wideband characteristics, the output of these devices should be capacitively- or AC-coupled to a 50 Ω termination. The module must not be DC-coupled to loads of less than 2,000 Ohms. For field use, it is recommended that a temperature-compensated HV supply be employed to maintain a constant responsivity over temperature.

Excelitas’ InGaAs C30659-1550E Preamplifier Modules, with 1550 nm peak response, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities.

Customization of the C30659 Series of APD Preamplifier Modules is available to meet your specific design challenges.

Key Features

• System bandwidths of 50 MHz and 200MHz
• Ultra low noise equivalent power (NEP)
• Spectral response range:
  • With Si APD: 400 to 1100 nm
  • With InGaAs APD: 1100 to 1700 nm
• Typical power consumption: 150 mW
• ±5 V amplifier operating voltages
• 50 Ω AC load capability (AC-Coupled)
• Hermetically-sealed TO-8 package
• High reliability
• Fast overload recovery
• Pin-to-pin compatible with the C30950 Series
• Light entry angle, over 130°
• Model 1550E exhibits enhanced damage threshold
• RoHS-compliant

Applications

• Range finding
• LIDAR
• Confocal microscopy