InGaAs APD Receiver Modules
Esterline CMC Electronics InGaAs APD Receiver Modules were designed for the most demanding low light high repetition rate applications where fast recovery is of the utmost importance. A fast response Transimpedance Amplifier (TIA) is coupled to the output of the APD which is directly bonded to an efficient TEC, allowing the best possible thermal conductivity.
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•Datasheet: InGaAs APD Receiver Modules
Esterline CMC Electronics' 200µm InGaAs Avalanche Photodiode Preamplifier Module with TEC 264-339759-000 uses a low noise InGaAs APD with an ionization ratio of 0.2 with a Gasfet input transimpedance amplifier in a 12-lead TO-8 package. Each amplifier has an overload input protection circuit for fast recovery. The output can be AC or DC coupled to a 100 ohm load. An internal TEC allows temperature control of the APD. The APD temperature is monitored by an internal thermistor.
InGaAs APD Receiver Modules Features:
- 50MHz bandwidth
- Low k of 0.2 (Low noise) InGaAs APD
- Low power TEC
- High Quantum Efficiency
- Low Noise Equivalent Power NEP
- Spectral Response: 1000 to 1600 nm
- Fast overload recovery
- Hermetically-Sealed TO-8 Package
- MIL-PRF-38534
InGaAs APD Receiver Modules Applications:
- Range Finding
- LIDAR
- Laser Profiling
- Free –Space Optical Communication Systems
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•Datasheet: InGaAs APD Receiver Modules